ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. Voltage - Collector Emitter Breakdown (Max) A small current on the P doped layer transforms into a higher current on other two terminals.ĭiscrete Semiconductor Products Transistors - Bipolar (BJT) - Single.Collector layer is bigger in size than the other two layers and thus highly doped.The centred layer is very small in size and is low concentrated as compared to the other two N doped layers.These 3 layers are different from each other in terms of size and concentration of doping.single P doped layer embedded between two N doped layers. The maximum collector current of the transistor is 200mA therefore user can drive loads under 200mA in their electronic applications, Moreover 2N3904 also work good as an amplifier, the total device dissipation is 625 milliwatt due to which it can also be used for audio and RF signal amplification purposes. It can be used in wide variety of electronic applications for switching and amplification purposes. It is mostly used by electronic students and hobbyists in their projects, but it is also used in commercial electronic products. Continuous Collector current (IC) is 200mAĢN3904 is a widely used general purpose transistor.Storage and Fall Time Equivalent Test Circuit.Delay and Rise Time Equivalent Test Circuit.How to Safely Long Run 2N3904 in a Circuit The pin outs of the transistor 2N3904 are given in the following diagram.Playing with Transistors: NPN 2N3904 Transistor Experiment CatalogĢN3904 Environmental and Export Classifications The above data is quite sufficient and adequate for any electronic hobbyist for understanding the transistor 2N3904 safely and correctly.The minimum amount of voltage required to trigger the base of the device is 0.65 volts, its also called the case/emitter saturation voltage.The minimum amount of voltage required for activating the collector is 0.2 volts, its also known as the collector-emitter saturation voltage.The hFE or the forward current gain of the device is between 100 to 300.Similarly the minimum amount of current required to keep the collector load switched is also 50nA.Minimum current required for keeping the base of the transistor activated is 50nA.The maximum base to emitter breakdown voltage is 6 volts.Similarly the maximum collector to base breakdown voltage is 60 volts.Maximum collector to emitter breakdown voltage for a 2N3904 transistor is 40 volts.Other Useful Characteristics of this device are discussed below: The maximum allowable collector to emitter or the Ic must not exceed 200mA.The Vcbo or the maximum tolerable voltage across collector-base is 60 volts.The Vceo or the maximum tolerable Collector-Emitter voltage is 4 volts.The absolute maximum ratings of this transistor may be understood from the following data: It's dynamic range may include a current handling capability of more than 100mA for switching applications and a 100MHz frequency handling capacity fits with amplification purposes. The transistor 2N3904 comes under the category of NPN small signal, low power, general purpose transistor, mainly applicable for switching and for signal amplification.
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